Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 58
| Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G3R350MT12D GeneSiC Semiconductor | 1 $5.2200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 6,136 Cart + RFQ |
G3R75MT12D GeneSiC Semiconductor | 1 $11.5500 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 8,851 Cart + RFQ |
G3R40MT12K GeneSiC Semiconductor | 1 $19.4400 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 71A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 9,666 Cart + RFQ |
G3R12MT12K GeneSiC Semiconductor | 1 $71.7900 | Datasheet | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 157A (Tc) | 15V, 18V | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 288 nC @ 15 V | +22V, -10V | 9335 pF @ 800 V | - | 567W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 4,528 Cart + RFQ |
G2R50MT33K GeneSiC Semiconductor | 1 $325.2400 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 63A (Tc) | 20V | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | +25V, -10V | 7301 pF @ 1000 V | Standard | 536W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 | 1,352 Cart + RFQ |
G3R60MT07D GeneSiC Semiconductor | 1 $11.1600 | Datasheet | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 | 2,156 Cart + RFQ |
G3R60MT07J GeneSiC Semiconductor | 1 $11.7700 | Datasheet | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 3,893 Cart + RFQ |
G2R1000MT33J GeneSiC Semiconductor | 1 $20.5600 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 7,518 Cart + RFQ |
GA10JT12-263 GeneSiC Semiconductor | 1 $20.7400 | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | - | - | 3,962 Cart + RFQ |
GA05JT03-46 GeneSiC Semiconductor | 1 $70.3900 | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 300 V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 | 3,792 Cart + RFQ |
G3R450MT17D GeneSiC Semiconductor | 1 $7.9300 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 6,670 Cart + RFQ |
G3R160MT12J GeneSiC Semiconductor | 1 $7.9800 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 15V | 208mOhm @ 10A, 15V | 2.7V @ 5mA (Typ) | 23 nC @ 15 V | +20V, -10V | 724 pF @ 800 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 8,606 Cart + RFQ |
GA10SICP12-263 GeneSiC Semiconductor | 1 $29.6769 | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 7,580 Cart + RFQ |
GA50JT06-258 GeneSiC Semiconductor | 1 $693.0000 | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 600 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 769W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-258 | TO-258-3, TO-258AA | 3,043 Cart + RFQ |
GA08JT17-247 GeneSiC Semiconductor | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 1,856 Cart + RFQ | |
G3R20MT17N GeneSiC Semiconductor | 1 $149.0000 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 100A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 523W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC | 5,069 Cart + RFQ |
GA04JT17-247 GeneSiC Semiconductor | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 7,028 Cart + RFQ | |
GA16JT17-247 GeneSiC Semiconductor | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 | 5,594 Cart + RFQ | |
2N7635-GA GeneSiC Semiconductor | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 | 5,886 Cart + RFQ | |
2N7636-GA GeneSiC Semiconductor | Datasheet | - | SiC (Silicon Carbide Junction Transistor) | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324 pF @ 35 V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA | 2,648 Cart + RFQ |