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GA10JT12-263
TRANS SJT 1200V 25A
Mfr. Part Number
GA10JT12-263
Manufacturer
GeneSiC Semiconductor
Datasheet
Datasheet
Description
TRANS SJT 1200V 25A
RoHS Status
Lead Free / RoHS Complaint
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GA10JT12-263
GeneSiC Semiconductor
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GA10JT12-263
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
120mOhm @ 10A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1403 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
-
Package / Case
-
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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