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G3R12MT12K
1200V 12M TO-247-4 G3R SIC MOSFE
Mfr. Part Number
G3R12MT12K
Manufacturer
GeneSiC Semiconductor
Datasheet
Datasheet
Description
1200V 12M TO-247-4 G3R SIC MOSFE
RoHS Status
Lead Free / RoHS Complaint
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G3R12MT12K
GeneSiC Semiconductor
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G3R12MT12K
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
157A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
13mOhm @ 100A, 18V
Vgs(th) (Max) @ Id
2.7V @ 50mA
Gate Charge (Qg) (Max) @ Vgs
288 nC @ 15 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
9335 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
567W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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