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GA50JT06-258
TRANS SJT 600V 100A TO258
Mfr. Part Number
GA50JT06-258
Manufacturer
GeneSiC Semiconductor
Datasheet
Description
TRANS SJT 600V 100A TO258
RoHS Status
Lead Free / RoHS Complaint
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GA50JT06-258
GeneSiC Semiconductor
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GA50JT06-258
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
25mOhm @ 50A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
769W (Tc)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-258
Package / Case
TO-258-3, TO-258AA
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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