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G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
Mfr. Part Number
G2R1000MT33J
Manufacturer
GeneSiC Semiconductor
Datasheet
Datasheet
Description
SIC MOSFET N-CH 4A TO263-7
RoHS Status
Lead Free / RoHS Complaint
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G2R1000MT33J
GeneSiC Semiconductor
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G2R1000MT33J
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
238 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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