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G3R160MT12J
SIC MOSFET N-CH 19A TO263-7
Mfr. Part Number
G3R160MT12J
Manufacturer
GeneSiC Semiconductor
Datasheet
Datasheet
Description
SIC MOSFET N-CH 19A TO263-7
RoHS Status
Lead Free / RoHS Complaint
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G3R160MT12J
GeneSiC Semiconductor
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G3R160MT12J
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
208mOhm @ 10A, 15V
Vgs(th) (Max) @ Id
2.7V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
724 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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