2N7635-GA | Yingxinyuan Int'l(Group) Ltd

• • • • 2N7635-GA

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2N7635-GA

TRANS SJT 650V 4A TO257

Mfr. Part Number

2N7635-GA

Manufacturer

GeneSiC Semiconductor

Datasheet

Description

TRANS SJT 650V 4A TO257

RoHS Status

Lead Free / RoHS Complaint

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2N7635-GA

GeneSiC Semiconductor

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2N7635-GA

GeneSiC Semiconductor

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Specifications

Product Description

Purchase & Inquiry

FET Type

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

4A (Tc) (165°C)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

415mOhm @ 4A

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

324 pF @ 35 V

FET Feature

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 225°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-257

Package / Case

TO-257-3

Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.