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2N7635-GA
TRANS SJT 650V 4A TO257
Mfr. Part Number
2N7635-GA
Manufacturer
GeneSiC Semiconductor
Datasheet
Description
TRANS SJT 650V 4A TO257
RoHS Status
Lead Free / RoHS Complaint
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2N7635-GA
GeneSiC Semiconductor
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2N7635-GA
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
415mOhm @ 4A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
324 pF @ 35 V
FET Feature
-
Power Dissipation (Max)
47W (Tc)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-257
Package / Case
TO-257-3
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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