GA16JT17-247 | Yingxinyuan Int'l(Group) Ltd

• • • • GA16JT17-247

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GA16JT17-247

TRANS SJT 1700V 16A TO247AB

Mfr. Part Number

GA16JT17-247

Manufacturer

GeneSiC Semiconductor

Datasheet

Description

TRANS SJT 1700V 16A TO247AB

RoHS Status

Lead Free / RoHS Complaint

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GA16JT17-247

GeneSiC Semiconductor

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GA16JT17-247

GeneSiC Semiconductor

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Specifications

Product Description

Purchase & Inquiry

FET Type

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1700 V

Current - Continuous Drain (Id) @ 25°C

16A (Tc) (90°C)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

110mOhm @ 16A

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Vgs (Max)

Input Capacitance (Ciss) (Max) @ Vds

FET Feature

Power Dissipation (Max)

282W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AB

Package / Case

TO-247-3

Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.