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GA04JT17-247
TRANS SJT 1700V 4A TO247AB
Mfr. Part Number
GA04JT17-247
Manufacturer
GeneSiC Semiconductor
Datasheet
Datasheet
Description
TRANS SJT 1700V 4A TO247AB
RoHS Status
Lead Free / RoHS Complaint
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GA04JT17-247
GeneSiC Semiconductor
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GA04JT17-247
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
480mOhm @ 4A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
106W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AB
Package / Case
TO-247-3
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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