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G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
Mfr. Part Number
G3R75MT12D
Manufacturer
GeneSiC Semiconductor
Datasheet
Datasheet
Description
SIC MOSFET N-CH 41A TO247-3
RoHS Status
Lead Free / RoHS Complaint
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G3R75MT12D
GeneSiC Semiconductor
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G3R75MT12D
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
2.69V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
207W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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