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G3R20MT17N
SIC MOSFET N-CH 100A SOT227
Mfr. Part Number
G3R20MT17N
Manufacturer
GeneSiC Semiconductor
Datasheet
Datasheet
Description
SIC MOSFET N-CH 100A SOT227
RoHS Status
Lead Free / RoHS Complaint
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G3R20MT17N
GeneSiC Semiconductor
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G3R20MT17N
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
26mOhm @ 75A, 15V
Vgs(th) (Max) @ Id
2.7V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
400 nC @ 15 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
10187 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
523W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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