Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 10
ProductPricingDatasheetFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
G06NP06S2
Goford Semiconductor
1
$0.9100
Datasheet
N and P-ChannelStandard60V6A (Tc)35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V2.5V @ 250µA, 3.5V @ 250µA22nC @ 10V, 25nC @ 10V-2W (Tc), 2.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
1,234
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G4953S
Goford Semiconductor
1
$0.4600
Datasheet
2 P-Channel (Dual)Standard30V5A (Tc)60mOhm @ 5A, 10V3V @ 250µA11nC @ 10V520pF @ 15V2.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
6,953
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G4616
Goford Semiconductor
1
$0.6200
Datasheet
N and P-Channel ComplementaryStandard40V8A (Tc), 7A (Tc)20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V2.5V @ 250µA12nC @ 10V, 13nC @ 10V415pF @ 20V, 520pF @ 20V2W (Tc), 2.8W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
2,495
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G170P03S2
Goford Semiconductor
1
$0.7000
Datasheet
2 P-Channel (Dual)-30V9A (Tc)25mOhm @ 5A, 4.5V2.5V @ 250µA18nC @ 10V1786pF @ 4.5V1.4W (Tc)-55°C ~ 150°C (Tc)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
4,623
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G33N03D3
Goford Semiconductor
1
$0.8500
Datasheet
2 N-Channel (Dual)Standard30V30A (Tc)13mOhm @ 18A, 10V2.5V @ 250µA15nC @ 10V1530pF @ 15V18.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-PowerVDFN8-DFN (3x3)
3,973
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G180N06S2
Goford Semiconductor
1
$0.9300
Datasheet
2 N-Channel (Dual)Standard60V8A (Tc)20mOhm @ 6A, 10V2.4V @ 250µA58nC @ 10V2330pF @ 30V2W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
7,159
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G05NP06S2
Goford Semiconductor
1
$0.6300
Datasheet
N and P-Channel-60V5A (Tc), 3.1A (Tc)40mOhm @ 3.9A, 5V, 95mOhm @ 200mA, 4.5V2V @ 250µA, 2.2V @ 250µA22nC @ 10V, 37nC @ 10V1336pF @ 30V, 1454pF @ 30V2.5W (Tc), 1.9W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
8,218
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G05N06S2
Goford Semiconductor
1
$0.6400
Datasheet
2 N-Channel-60V5A (Tc)140mOhm @ 5A, 4.5V2.5V @ 250µA22nC @ 10V979pF @ 30V2W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
8,682
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G20N06D52
Goford Semiconductor
1
$0.7400
Datasheet
2 N-Channel (Dual)Standard60V20A (Ta)30mOhm @ 20A, 10V2.5V @ 250µA25nC @ 10V1220pF @ 30V45W (Ta)-55°C ~ 175°C (TJ)Surface Mount8-PowerTDFN8-DFN (4.9x5.75)
3,610
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GT090N06D52
Goford Semiconductor
1
$1.3900
Datasheet
2 N-Channel (Dual)Standard60V40A (Tc)14mOhm @ 14A, 10V2.4V @ 250µA24nC @ 10V1620pF @ 30V62W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-PowerTDFN8-DFN (4.9x5.75)
6,717
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RFQ