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G33N03D3
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
Mfr. Part Number
G33N03D3
Manufacturer
Goford Semiconductor
Datasheet
Description
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
RoHS Status
Lead Free / RoHS Complaint
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G33N03D3
Goford Semiconductor
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G33N03D3
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Rds On (Max) @ Id, Vgs
13mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1530pF @ 15V
Power - Max
18.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-DFN (3x3)
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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