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G05N06S2
N60V, 5A,RD<35M@10V,VTH1V~2.5V,
Mfr. Part Number
G05N06S2
Manufacturer
Goford Semiconductor
Datasheet
Description
N60V, 5A,RD<35M@10V,VTH1V~2.5V,
RoHS Status
Lead Free / RoHS Complaint
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G05N06S2
Goford Semiconductor
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G05N06S2
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Rds On (Max) @ Id, Vgs
140mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
979pF @ 30V
Power - Max
2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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