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G4953S
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
Mfr. Part Number
G4953S
Manufacturer
Goford Semiconductor
Datasheet
Description
P+P -30V,RD(MAX)<60M@-10V,RD(MAX
RoHS Status
Lead Free / RoHS Complaint
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G4953S
Goford Semiconductor
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G4953S
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 P-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
520pF @ 15V
Power - Max
2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

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