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GT090N06D52
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Mfr. Part Number
GT090N06D52
Manufacturer
Goford Semiconductor
Datasheet
Description
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
RoHS Status
Lead Free / RoHS Complaint
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GT090N06D52
Goford Semiconductor
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GT090N06D52
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1620pF @ 30V
Power - Max
62W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (4.9x5.75)
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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