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G20N06D52
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
Mfr. Part Number
G20N06D52
Manufacturer
Goford Semiconductor
Datasheet
Description
N60V,RD(MAX)<30M@10V,RD(MAX)<40M
RoHS Status
Lead Free / RoHS Complaint
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G20N06D52
Goford Semiconductor
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G20N06D52
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Rds On (Max) @ Id, Vgs
30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1220pF @ 30V
Power - Max
45W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (4.9x5.75)
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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