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G170P03S2
P-30V, -9A,RD<18M@-10V,VTH-1V~-2
Mfr. Part Number
G170P03S2
Manufacturer
Goford Semiconductor
Datasheet
Description
P-30V, -9A,RD<18M@-10V,VTH-1V~-2
RoHS Status
Lead Free / RoHS Complaint
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G170P03S2
Goford Semiconductor
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G170P03S2
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 P-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1786pF @ 4.5V
Power - Max
1.4W (Tc)
Operating Temperature
-55°C ~ 150°C (Tc)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOP
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GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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