Transistors - FETs, MOSFETs - Arrays
Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
Product List
Total Components: 19
Product | Pricing | Datasheet | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC2106 EPC | 1 $1.8200 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 1,969 Cart + RFQ |
EPC2110 EPC | 1 $2.3700 | Datasheet | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | - | Die | Die | 6,872 Cart + RFQ |
EPC2104 EPC | 1 $9.1600 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 9,455 Cart + RFQ |
EPC2102 EPC | 1 $9.1600 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 8,514 Cart + RFQ |
EPC2110ENGRT EPC | 1 $2.3700 | Datasheet | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60mOhm @ 4A, 5V | 2.5V @ 700µA | 0.8nC @ 5V | 80pF @ 60V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 9,471 Cart + RFQ |
EPC2100ENGRT EPC | 1 $5.1832 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,219 Cart + RFQ |
EPC2221 EPC | 1 $2.7300 | Datasheet | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 100V | 5A | - | - | - | - | - | 150°C (TJ) | Surface Mount | Die | Die | 2,693 Cart + RFQ |
EPC2106ENGRT EPC | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70mOhm @ 2A, 5V | 2.5V @ 600µA | 0.73nC @ 5V | 75pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 5,433 Cart + RFQ | |
EPC2103ENGRT EPC | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | - | - | Surface Mount | Die | Die | 6,118 Cart + RFQ | |
EPC2104ENGRT EPC | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3mOhm @ 20A, 5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 4,290 Cart + RFQ | |
EPC2105ENGRT EPC | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5mOhm @ 20A, 5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,099 Cart + RFQ | |
EPC2101ENGRT EPC | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 5,626 Cart + RFQ | |
EPC2102ENGRT EPC | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,834 Cart + RFQ | |
EPC2111 EPC | 1 $3.2100 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 16A (Ta) | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | 2.5V @ 5mA | 2.2nC @ 5V, 5.7nC @ 5V | 230pF @ 15V, 590pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 1,720 Cart + RFQ |
EPC2103 EPC | 1 $9.1600 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,897 Cart + RFQ |
EPC2105 EPC | 1 $9.1600 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A, 38A | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 2.5V @ 2.5mA, 2.5V @ 10mA | 2.5nC @ 5V, 10nC @ 5V | 300pF @ 40V, 1100pF @ 40V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 4,958 Cart + RFQ |
EPC2108 EPC | 1 $1.9100 | Datasheet | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | 9-BGA (1.35x1.35) | 5,905 Cart + RFQ |
EPC2100 EPC | 1 $6.9400 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 5,088 Cart + RFQ |
EPC2101 EPC | 1 $9.1600 | Datasheet | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A, 38A | 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V | 2.5V @ 3mA, 2.5V @ 12mA | 2.7nC @ 5V, 12nC @ 5V | 300pF @ 30V, 1200pF @ 30V | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die | 2,672 Cart + RFQ |