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EPC2100ENGRT
GANFET 2 N-CH 30V 9.5A/38A DIE
Mfr. Part Number
EPC2100ENGRT
Manufacturer
EPC
Datasheet
Datasheet
Description
GANFET 2 N-CH 30V 9.5A/38A DIE
RoHS Status
Lead Free / RoHS Complaint
sample
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EPC2100ENGRT
EPC
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs
4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 15V, 1960pF @ 15V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Brand Introduction
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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