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EPC2110ENGRT
GAN TRANS 2N-CH 120V BUMPED DIE
Mfr. Part Number
EPC2110ENGRT
Manufacturer
EPC
Datasheet
Datasheet
Description
GAN TRANS 2N-CH 120V BUMPED DIE
RoHS Status
Lead Free / RoHS Complaint
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EPC2110ENGRT
EPC
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual) Common Source
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25°C
3.4A
Rds On (Max) @ Id, Vgs
60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 60V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Brand Introduction
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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