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EPC2111
GAN TRANS ASYMMETRICAL HALF BRID
Mfr. Part Number
EPC2111
Manufacturer
EPC
Datasheet
Datasheet
Description
GAN TRANS ASYMMETRICAL HALF BRID
RoHS Status
Lead Free / RoHS Complaint
sample
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EPC2111
EPC
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In Stock: 1,720
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Rds On (Max) @ Id, Vgs
19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Vgs(th) (Max) @ Id
2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
230pF @ 15V, 590pF @ 15V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Brand Introduction
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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