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EPC2108
GANFET 3 N-CH 60V/100V 9BGA
Mfr. Part Number
EPC2108
Manufacturer
EPC
Datasheet
Description
GANFET 3 N-CH 60V/100V 9BGA
RoHS Status
Lead Free / RoHS Complaint
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EPC2108
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Specifications
Product Description
Purchase & Inquiry
FET Type
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V, 100V
Current - Continuous Drain (Id) @ 25°C
1.7A, 500mA
Rds On (Max) @ Id, Vgs
190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Vgs(th) (Max) @ Id
2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
0.22nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 30V, 7pF @ 30V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
9-VFBGA
Supplier Device Package
9-BGA (1.35x1.35)
Brand Introduction
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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