EPC2108 | Yingxinyuan Int'l(Group) Ltd

• • • • EPC2108

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EPC2108

GANFET 3 N-CH 60V/100V 9BGA

Mfr. Part Number

EPC2108

Manufacturer

EPC

Datasheet

Description

GANFET 3 N-CH 60V/100V 9BGA

RoHS Status

Lead Free / RoHS Complaint

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EPC2108

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Specifications

Product Description

Purchase & Inquiry

FET Type

3 N-Channel (Half Bridge + Synchronous Bootstrap)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

60V, 100V

Current - Continuous Drain (Id) @ 25°C

1.7A, 500mA

Rds On (Max) @ Id, Vgs

190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V

Vgs(th) (Max) @ Id

2.5V @ 100µA, 2.5V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

0.22nC @ 5V, 0.044nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

22pF @ 30V, 7pF @ 30V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

9-VFBGA

Supplier Device Package

9-BGA (1.35x1.35)

Brand Introduction

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.