EPC2101ENGRT | Yingxinyuan Int'l(Group) Ltd

• • • • EPC2101ENGRT

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EPC2101ENGRT

GAN TRANS ASYMMETRICAL HALF BRID

Mfr. Part Number

EPC2101ENGRT

Manufacturer

EPC

Datasheet

Description

GAN TRANS ASYMMETRICAL HALF BRID

RoHS Status

Lead Free / RoHS Complaint

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EPC2101ENGRT

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EPC2101ENGRT

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Specifications

Product Description

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FET Type

2 N-Channel (Half Bridge)

FET Feature

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9.5A, 38A

Rds On (Max) @ Id, Vgs

11.5mOhm @ 20A, 5V

Vgs(th) (Max) @ Id

2.5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 30V

Power - Max

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

Brand Introduction

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.