Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 7
ProductPricingDatasheetDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - JunctionStock & Quantity
IV1D06006O2
Inventchip Technology
1
$4.3700
Datasheet
Silicon Carbide Schottky650 V17.4A1.65 V @ 6 ANo Recovery Time > 500mA (Io)0 ns10 µA @ 650 V212pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
9,607
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IV1D06006P3
Inventchip Technology
1
$4.4000
Datasheet
Silicon Carbide Schottky650 V16.7A1.65 V @ 6 ANo Recovery Time > 500mA (Io)0 ns10 µA @ 650 V224pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3-55°C ~ 175°C
8,297
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IV1D12005O2
Inventchip Technology
1
$6.5400
Datasheet
Silicon Carbide Schottky1200 V17A1.8 V @ 5 ANo Recovery Time > 500mA (Io)0 ns30 µA @ 1200 V320pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
2,646
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IV1D12010O2
Inventchip Technology
1
$11.7800
Datasheet
Silicon Carbide Schottky1200 V28A1.8 V @ 10 ANo Recovery Time > 500mA (Io)0 ns50 µA @ 1200 V575pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C (TJ)
8,509
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IV1D12010T2
Inventchip Technology
1
$11.7800
Datasheet
Silicon Carbide Schottky1200 V30A1.8 V @ 10 ANo Recovery Time > 500mA (Io)0 ns50 µA @ 1200 V575pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C (TJ)
5,022
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IV1D12015T2
Inventchip Technology
1
$14.5500
Datasheet
Silicon Carbide Schottky1200 V44A1.8 V @ 15 ANo Recovery Time > 500mA (Io)0 ns80 µA @ 1200 V888pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
7,585
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IV1D12020T2
Inventchip Technology
1
$19.1700
Datasheet
Silicon Carbide Schottky1200 V54A1.8 V @ 20 ANo Recovery Time > 500mA (Io)0 ns120 µA @ 1200 V1114pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
8,899
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RFQ