Diodes - Rectifiers - Single
Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.
Product List
Total Components: 7
Product | Pricing | Datasheet | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction | Stock & Quantity |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IV1D06006O2 Inventchip Technology | 1 $4.3700 | Datasheet | Silicon Carbide Schottky | 650 V | 17.4A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 212pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 9,607 Cart + RFQ |
IV1D06006P3 Inventchip Technology | 1 $4.4000 | Datasheet | Silicon Carbide Schottky | 650 V | 16.7A | 1.65 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | 224pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 | -55°C ~ 175°C | 8,297 Cart + RFQ |
IV1D12005O2 Inventchip Technology | 1 $6.5400 | Datasheet | Silicon Carbide Schottky | 1200 V | 17A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | 320pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C | 2,646 Cart + RFQ |
IV1D12010O2 Inventchip Technology | 1 $11.7800 | Datasheet | Silicon Carbide Schottky | 1200 V | 28A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 575pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C (TJ) | 8,509 Cart + RFQ |
IV1D12010T2 Inventchip Technology | 1 $11.7800 | Datasheet | Silicon Carbide Schottky | 1200 V | 30A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 575pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C (TJ) | 5,022 Cart + RFQ |
IV1D12015T2 Inventchip Technology | 1 $14.5500 | Datasheet | Silicon Carbide Schottky | 1200 V | 44A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 888pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 7,585 Cart + RFQ |
IV1D12020T2 Inventchip Technology | 1 $19.1700 | Datasheet | Silicon Carbide Schottky | 1200 V | 54A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 1114pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C | 8,899 Cart + RFQ |