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IV1D12005O2
SIC DIODE, 1200V 5A, TO-220-2
Mfr. Part Number
IV1D12005O2
Manufacturer
Inventchip Technology
Datasheet
Description
SIC DIODE, 1200V 5A, TO-220-2
RoHS Status
Lead Free / RoHS Complaint
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IV1D12005O2
Inventchip Technology
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IV1D12005O2
Inventchip Technology
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Specifications
Product Description
Purchase & Inquiry
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
17A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 5 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
30 µA @ 1200 V
Capacitance @ Vr, F
320pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55°C ~ 175°C
Brand Introduction

Inventchip Technology Co., Ltd. is a high-tech semiconductor company, focusing on the product development of Silicon Carbide (SiC) power devices, gate driver ICs and power management controller ICs. Founded in July 2017, their headquarters is located in Shanghai, China and its SiC fab factory is located at Zhejiang Province.

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