IV1D12015T2 | Yingxinyuan Int'l(Group) Ltd

• • • • IV1D12015T2

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IV1D12015T2

SIC DIODE, 1200V 15A, TO-247-2

Mfr. Part Number

IV1D12015T2

Manufacturer

Inventchip Technology

Datasheet

Description

SIC DIODE, 1200V 15A, TO-247-2

RoHS Status

Lead Free / RoHS Complaint

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IV1D12015T2

Inventchip Technology

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IV1D12015T2

Inventchip Technology

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Specifications

Product Description

Purchase & Inquiry

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200 V

Current - Average Rectified (Io)

44A

Voltage - Forward (Vf) (Max) @ If

1.8 V @ 15 A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0 ns

Current - Reverse Leakage @ Vr

80 µA @ 1200 V

Capacitance @ Vr, F

888pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247-2

Operating Temperature - Junction

-55°C ~ 175°C

Brand Introduction

Inventchip Technology Co., Ltd. is a high-tech semiconductor company, focusing on the product development of Silicon Carbide (SiC) power devices, gate driver ICs and power management controller ICs. Founded in July 2017, their headquarters is located in Shanghai, China and its SiC fab factory is located at Zhejiang Province.