Discrete Semiconductor Products
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
Product List
Total Components: 46
ProductPricingDatasheetPackage / CaseSupplier Device PackageIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVoltage - Anode - Cathode (Vak)(Max)Vce(on) (Max) @ Vge, IcRegulator Current (Max)Current - Collector Cutoff (Max)Voltage - Limiting (Max)Input Capacitance (Cies) @ VcePower - MaxInputApplicationsNTC ThermistorOperating TemperatureOperating TemperatureMounting TypeMounting TypePackage / CasePackage / CaseSupplier Device PackageSupplier Device PackageDiode TypeIGBT TypeTechnologyVoltage - Collector Emitter Breakdown (Max)Voltage - Peak Reverse (Max)Current - Collector (Ic) (Max)Current - Average Rectified (Io)Current - Collector Pulsed (Icm)Voltage - Forward (Vf) (Max) @ IfVce(on) (Max) @ Vge, IcCurrent - Reverse Leakage @ VrPower - MaxOperating TemperatureSwitching EnergyMounting TypeInput TypePackage / CaseGate ChargeSupplier Device PackageTd (on/off) @ 25°CDiode TypeTest ConditionVoltage - Peak Reverse (Max)Reverse Recovery Time (trr)Current - MaxOperating TemperatureCapacitance @ Vr, FMounting TypeResistance @ If, FPackage / CasePower Dissipation (Max)Supplier Device PackageOperating TemperatureFET TypePackage / CaseVoltage - Breakdown (V(BR)GSS)Supplier Device PackageDrain to Source Voltage (Vdss)Diode ConfigurationCurrent - Drain (Idss) @ Vds (Vgs=0)Diode TypeCurrent Drain (Id) - MaxVoltage - DC Reverse (Vr) (Max)Voltage - Cutoff (VGS off) @ IdCurrent - Average Rectified (Io) (per Diode)Input Capacitance (Ciss) (Max) @ VdsVoltage - Forward (Vf) (Max) @ IfResistance - RDS(On)SpeedPower - MaxReverse Recovery Time (trr)Operating TemperatureCurrent - Reverse Leakage @ VrMounting TypeOperating Temperature - JunctionPackage / CaseMounting TypeSupplier Device PackagePackage / CaseVoltageSupplier Device PackagePower Dissipation (Max)Diode TypeVoltage - OutputVoltage - DC Reverse (Vr) (Max)Voltage - Offset (Vt)Current - Average Rectified (Io)Current - Gate to Anode Leakage (Igao)Voltage - Forward (Vf) (Max) @ IfCurrent - Valley (Iv)SpeedCurrent - PeakReverse Recovery Time (trr)Package / CaseCurrent - Reverse Leakage @ VrTransistor TypeCapacitance @ Vr, FApplicationsMounting TypeVoltage - RatedPackage / CaseCurrent Rating (Amps)Supplier Device PackageMounting TypeOperating Temperature - JunctionPackage / CaseCapacitance @ Vr, FSupplier Device PackageCapacitance RatioCapacitance Ratio ConditionVoltage - Peak Reverse (Max)Diode TypeQ @ Vr, FOperating TemperatureMounting TypePackage / CaseSupplier Device PackageConfigurationVoltage - Zener (Nom) (Vz)TolerancePower - MaxImpedance (Max) (Zzt)Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating TemperatureMounting TypePackage / CaseSupplier Device PackageVoltage - Zener (Nom) (Vz)TolerancePower - MaxImpedance (Max) (Zzt)Current - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTypeConfigurationCurrentVoltageVoltage - IsolationMounting TypePackage / CaseVoltage - BreakoverCurrent - BreakoverCurrent - Hold (Ih) (Max)Current - Peak OutputOperating TemperaturePackage / CaseSupplier Device PackageStructureNumber of SCRs, DiodesVoltage - Off StateCurrent - On State (It (AV)) (Max)Current - On State (It (RMS)) (Max)Voltage - Gate Trigger (Vgt) (Max)Current - Gate Trigger (Igt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Hold (Ih) (Max)Operating TemperatureMounting TypePackage / CaseVoltage - Off StateVoltage - Gate Trigger (Vgt) (Max)Current - Gate Trigger (Igt) (Max)Voltage - On State (Vtm) (Max)Current - On State (It (AV)) (Max)Current - On State (It (RMS)) (Max)Current - Hold (Ih) (Max)Current - Off State (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)SCR TypeOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTriac TypeVoltage - Off StateCurrent - On State (It (RMS)) (Max)Voltage - Gate Trigger (Vgt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Gate Trigger (Igt) (Max)Current - Hold (Ih) (Max)ConfigurationOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)DC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)Frequency - TransitionPower - MaxMounting TypePackage / CaseSupplier Device PackageTransistor TypeVoltage - Collector Emitter Breakdown (Max)Frequency - TransitionNoise Figure (dB Typ @ f)GainPower - MaxDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector (Ic) (Max)Operating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VcePower - MaxFrequency - TransitionOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)DC Current Gain (hFE) (Min) @ Ic, VceVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)Frequency - TransitionPower - MaxMounting TypePackage / CaseSupplier Device PackageFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageTransistor TypeFrequencyGainVoltage - TestCurrent Rating (Amps)Noise FigureCurrent - TestPower - OutputVoltage - RatedPackage / CaseSupplier Device PackageFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorOperating TemperatureMounting TypeStock & Quantity
TPD3215M
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1
$175.1300
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)600V70A (Tc)34mOhm @ 30A, 8V-28nC @ 8V2260pF @ 100V470W-40°C ~ 150°C (TJ)Through HoleModuleModule---------------------------------------
8,122
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TP65H050G4BS
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1
$13.6500
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)650 V34A (Tc)10V60mOhm @ 22A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-119W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-263TO-263-3, D²Pak (2 Leads + Tab), TO-263AB------------
2,392
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TP65H070LSG-TR
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1
$13.7400
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)650 V25A (Tc)10V85mOhm @ 16A, 10V4.8V @ 700µA9.3 nC @ 10 V±20V600 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN------------
4,195
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TPH3206PS
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1
$10.3700
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)600 V17A (Tc)10V180mOhm @ 11A, 8V2.6V @ 500µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-96W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3------------
6,701
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TP65H070LDG
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1
$13.7400
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Cascode Gallium Nitride FET)650 V25A (Tc)10V85mOhm @ 16A, 10V4.8V @ 700µA9.3 nC @ 10 V±20V600 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount3-PQFN (8x8)3-PowerDFN------------
2,807
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TP65H050WS
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1
$19.2400
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Cascode Gallium Nitride FET)650 V34A (Tc)12V60mOhm @ 22A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-119W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3------------
8,857
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TP65H035G4WS
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1
$19.5400
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Cascode Gallium Nitride FET)650 V46.5A (Tc)10V41mOhm @ 30A, 10V4.8V @ 1mA22 nC @ 0 V±20V1500 pF @ 400 V-156W (Tc)-55°C ~ 150°CThrough HoleTO-247-3TO-247-3------------
7,056
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TP90H050WS
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1
$20.0300
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Cascode Gallium Nitride FET)900 V34A (Tc)10V63mOhm @ 22A, 10V4.4V @ 700µA17.5 nC @ 10 V±20V980 pF @ 600 V-119W (Tc)-55°C ~ 150°CThrough HoleTO-247-3TO-247-3------------
7,394
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TP65H035WS
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1
$21.7600
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Cascode Gallium Nitride FET)650 V46.5A (Tc)12V41mOhm @ 30A, 10V4.8V @ 1mA36 nC @ 10 V±20V1500 pF @ 400 V-156W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3------------
3,377
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TP65H035WSQA
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1
$23.2000
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Cascode Gallium Nitride FET)650 V47.2A (Tc)10V41mOhm @ 32A, 10V4.5V @ 1mA24 nC @ 10 V±20V1500 pF @ 400 V-187W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3------------
7,926
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TP65H015G5WS
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1
$35.1400
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)650 V93A (Tc)10V18mOhm @ 60A, 10V4.8V @ 2mA100 nC @ 10 V±20V5218 pF @ 400 V-266W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3------------
4,059
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TP65H150G4PS
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1
$6.2403
Datasheet
---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
3,495
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TPH3206PD
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$11.2600
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)600 V17A (Tc)10V180mOhm @ 11A, 8V2.6V @ 500µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-96W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3------------
9,567
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TP65H050WSQA
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1
$20.6700
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Cascode Gallium Nitride FET)650 V36A (Tc)10V60mOhm @ 25A, 10V4.8V @ 700µA24 nC @ 10 V±20V1000 pF @ 400 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3------------
8,646
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TPH3205WSBQA
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1
$22.9700
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)650 V35A (Tc)10V62mOhm @ 22A, 8V2.6V @ 700µA42 nC @ 8 V±18V2200 pF @ 400 V-125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3------------
3,061
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TPH3202PS
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Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)600 V9A (Tc)10V350mOhm @ 5.5A, 8V2.5V @ 250µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-65W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3------------
2,603
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TPH3202LD
Transphorm
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)600 V9A (Tc)10V350mOhm @ 5.5A, 8V2.5V @ 250µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-65W (Tc)-55°C ~ 175°C (TJ)Surface Mount4-PQFN (8x8)4-PowerDFN------------
6,384
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TPH3206LD
Transphorm
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)600 V17A (Tc)10V180mOhm @ 11A, 8V2.6V @ 500µA9.3 nC @ 4.5 V±18V760 pF @ 480 V-96W (Tc)-55°C ~ 175°C (TJ)Surface MountPQFN (8x8)4-PowerDFN------------
5,115
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TPH3208LD
Transphorm
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)650 V20A (Tc)10V130mOhm @ 13A, 8V2.6V @ 300µA14 nC @ 8 V±18V760 pF @ 400 V-96W (Tc)-55°C ~ 150°C (TJ)Surface Mount4-PQFN (8x8)4-PowerDFN------------
5,421
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TPH3207WS
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1
$33.2000
Datasheet
-----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------N-ChannelGaNFET (Gallium Nitride)650 V50A (Tc)10V41mOhm @ 32A, 8V2.65V @ 700µA42 nC @ 8 V±18V2197 pF @ 400 V-178W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3------------
1,762
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