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TPD3215M
GANFET 2N-CH 600V 70A MODULE
Mfr. Part Number
TPD3215M
Manufacturer
Transphorm
Datasheet
Description
GANFET 2N-CH 600V 70A MODULE
RoHS Status
Lead Free / RoHS Complaint
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TPD3215M
Transphorm
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TPD3215M
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
Power - Max
470W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
Module
Supplier Device Package
Module
Brand Introduction

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

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