Purchase Protection

The products we promise to sell are guaranteed to be brand new, original and authentic products and provide 365-day warranty service.

Please contact our sales team or send the model and quantity you need to yingxinyuan@yxsmd.com. We will reply to your message as soon as possible. I hope we can cooperate happily in the future.

TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
Mfr. Part Number
TP65H035G4WS
Manufacturer
Transphorm
Datasheet
Description
GANFET N-CH 650V 46.5A TO247-3
RoHS Status
Lead Free / RoHS Complaint
sample
Free Sample
TP65H035G4WS
Transphorm
*Quantity:
*Contact Name
Contact Name is required
Company Name
*Email
Email is required
Phone
*Country
Country is required
Your Question
SUBMIT
In Stock: 7,056
Unit Price
$
Add To Cart
Add to RFQ
Reference Price
QuantityPrice
1$ 19.5400
Not the price you want?
Send RFQ Now and we'll contact you ASAP
Quick RFQ
* Mandatory Fields
TP65H035G4WS
Transphorm
*Quantity:
*Contact Name
Contact Name is required
Company Name
*Email
Email is required
Phone
*Country
Country is required
Your Question
Please send RFQ, we will response immediately
QUICK RFQ
Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 0 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Brand Introduction

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

Similar Product
Related Categories
Evaluation   ( 0 )
I want to evaluation
*Email:
Rating:
Email is required
*Content
SUBMIT
Content is required
Related News