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RJH1DF7RDPQ-80#T2
RJH1DF7 - INSULATED GATE BIPOLAR
Mfr. Part Number
RJH1DF7RDPQ-80#T2
Manufacturer
Renesas Electronics Corporation
Datasheet
Datasheet
Description
RJH1DF7 - INSULATED GATE BIPOLAR
RoHS Status
Lead Free / RoHS Complaint
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RJH1DF7RDPQ-80#T2
Renesas Electronics Corporation
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RJH1DF7RDPQ-80#T2
Renesas Electronics Corporation
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1350 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
-
Vce(on) (Max) @ Vge, Ic
2.55V @ 15V, 35A
Power - Max
250 W
Switching Energy
-
Input Type
Standard
Gate Charge
-
Td (on/off) @ 25°C
58ns/144ns
Test Condition
600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Brand Introduction
Renesas Electronics Corporation delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live—securely and safely. A global leader in microcontrollers, analog, power, and SoC products and integrated platforms, Renesas provides the expertise, quality, and comprehensive solutions for a broad range of Automotive, Industrial, Home Electronics, Office Automation and Information Communication Technology applications to help shape a limitless future.
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