RJH1DF7RDPQ-80#T2 | Yingxinyuan Int'l(Group) Ltd

• • • • RJH1DF7RDPQ-80#T2

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RJH1DF7RDPQ-80#T2

RJH1DF7 - INSULATED GATE BIPOLAR

Mfr. Part Number

RJH1DF7RDPQ-80#T2

Manufacturer

Renesas Electronics Corporation

Datasheet

Description

RJH1DF7 - INSULATED GATE BIPOLAR

RoHS Status

Lead Free / RoHS Complaint

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RJH1DF7RDPQ-80#T2

Renesas Electronics Corporation

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1	$ 5.1700

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RJH1DF7RDPQ-80#T2

Renesas Electronics Corporation

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Specifications

Product Description

Purchase & Inquiry

IGBT Type

Voltage - Collector Emitter Breakdown (Max)

1350 V

Current - Collector (Ic) (Max)

60 A

Current - Collector Pulsed (Icm)

Vce(on) (Max) @ Vge, Ic

2.55V @ 15V, 35A

Power - Max

250 W

Switching Energy

Input Type

Standard

Gate Charge

Td (on/off) @ 25°C

58ns/144ns

Test Condition

600V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

Brand Introduction

Renesas Electronics Corporation delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live—securely and safely. A global leader in microcontrollers, analog, power, and SoC products and integrated platforms, Renesas provides the expertise, quality, and comprehensive solutions for a broad range of Automotive, Industrial, Home Electronics, Office Automation and Information Communication Technology applications to help shape a limitless future.