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G170P03D3
P-30V, -20A,RD<18M@-10V,VTH-1V~-
Mfr. Part Number
G170P03D3
Manufacturer
Goford Semiconductor
Datasheet
Description
P-30V, -20A,RD<18M@-10V,VTH-1V~-
RoHS Status
Lead Free / RoHS Complaint
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G170P03D3
Goford Semiconductor
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G170P03D3
Goford Semiconductor
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Specifications
Product Description
Purchase & Inquiry
FET Type
P-Channel
Technology
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
20A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
8-DFN (3.15x3.05)
Package / Case
8-PowerVDFN
Brand Introduction

GOFORD has been always devoted in developing and sales of power discrete, MOSFET products. We are promoting worldwide with extensive sales network.

Good lead time, reasonable pricing and strong technical support is how we get trust from the customers.

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