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TP65H150G4PS
GAN FET N-CH 650V TO-220
Mfr. Part Number
TP65H150G4PS
Manufacturer
Transphorm
Datasheet
Description
GAN FET N-CH 650V TO-220
RoHS Status
Lead Free / RoHS Complaint
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TP65H150G4PS
Transphorm
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TP65H150G4PS
Transphorm
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Specifications
Product Description
Purchase & Inquiry
FET Type
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Technology
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25°C
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Drive Voltage (Max Rds On, Min Rds On)
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Rds On (Max) @ Id, Vgs
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Vgs(th) (Max) @ Id
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Gate Charge (Qg) (Max) @ Vgs
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Vgs (Max)
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Input Capacitance (Ciss) (Max) @ Vds
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FET Feature
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Power Dissipation (Max)
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Operating Temperature
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Mounting Type
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Supplier Device Package
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Package / Case
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Brand Introduction

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.

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