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RM2P60S2
MOSFET P-CHANNEL 60V 1.9A SOT23
Mfr. Part Number
RM2P60S2
Manufacturer
Rectron USA
Datasheet
Description
MOSFET P-CHANNEL 60V 1.9A SOT23
RoHS Status
Lead Free / RoHS Complaint
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RM2P60S2
Rectron USA
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RM2P60S2
Rectron USA
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Specifications
Product Description
Purchase & Inquiry
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
215mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
358 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Brand Introduction

Rectron Limited was established in 1976 by an experienced team of semiconductor engineers. Rectron quickly emerged as a recognized supplier of high-quality discrete semiconductors. In 1985, Rectron opened wholly owned subsidiaries in the USA, London and Hong Kong. They have since enhanced their competitive advantage and increased manufacturing capacity of discrete products.

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