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RM3139K
MOSFET P-CH 20V 660MA SOT723
Mfr. Part Number
RM3139K
Manufacturer
Rectron USA
Datasheet
Description
MOSFET P-CH 20V 660MA SOT723
RoHS Status
Lead Free / RoHS Complaint
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RM3139K
Rectron USA
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RM3139K
Rectron USA
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Specifications
Product Description
Purchase & Inquiry
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
520mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
150mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-723
Package / Case
SOT-723
Brand Introduction

Rectron Limited was established in 1976 by an experienced team of semiconductor engineers. Rectron quickly emerged as a recognized supplier of high-quality discrete semiconductors. In 1985, Rectron opened wholly owned subsidiaries in the USA, London and Hong Kong. They have since enhanced their competitive advantage and increased manufacturing capacity of discrete products.

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