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2N7002KD1
MOSFET N-CH 60V 350MA DFN1006-3
Mfr. Part Number
2N7002KD1
Manufacturer
Rectron USA
Datasheet
Description
MOSFET N-CH 60V 350MA DFN1006-3
RoHS Status
Lead Free / RoHS Complaint
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2N7002KD1
Rectron USA
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2N7002KD1
Rectron USA
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1006-3
Package / Case
SC-101, SOT-883
Brand Introduction

Rectron Limited was established in 1976 by an experienced team of semiconductor engineers. Rectron quickly emerged as a recognized supplier of high-quality discrete semiconductors. In 1985, Rectron opened wholly owned subsidiaries in the USA, London and Hong Kong. They have since enhanced their competitive advantage and increased manufacturing capacity of discrete products.

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