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RM2020ES9
MOSFET N&P-CH 20V SOT363
Mfr. Part Number
RM2020ES9
Manufacturer
Rectron USA
Datasheet
Description
MOSFET N&P-CH 20V SOT363
RoHS Status
Lead Free / RoHS Complaint
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RM2020ES9
Rectron USA
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RM2020ES9
Rectron USA
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Specifications
Product Description
Purchase & Inquiry
FET Type
N and P-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
750mA (Ta), 800mA (Ta)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.8pC @ 10V, 750pC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
87pF @ 10V, 120pF @ 16V
Power - Max
150mW (Ta), 800mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SOT-363
Brand Introduction

Rectron Limited was established in 1976 by an experienced team of semiconductor engineers. Rectron quickly emerged as a recognized supplier of high-quality discrete semiconductors. In 1985, Rectron opened wholly owned subsidiaries in the USA, London and Hong Kong. They have since enhanced their competitive advantage and increased manufacturing capacity of discrete products.

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