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UPA2350T1G-E4-A
POWER, 2-ELEMENT, N-CH MOSFET
Mfr. Part Number
UPA2350T1G-E4-A
Manufacturer
Intersil (Renesas Electronics Corporation)
Datasheet
Description
POWER, 2-ELEMENT, N-CH MOSFET
RoHS Status
Lead Free / RoHS Complaint
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UPA2350T1G-E4-A
Intersil (Renesas Electronics Corporation)
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UPA2350T1G-E4-A
Intersil (Renesas Electronics Corporation)
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Specifications
Product Description
Purchase & Inquiry
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
6A
Rds On (Max) @ Id, Vgs
35mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds
542pF @ 10V
Power - Max
1.3W
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
4-XBGA, 4-FCBGA
Supplier Device Package
4-FlipChip
Brand Introduction
Effective January 1, 2018, Renesas and Intersil will operate as one unified enterprise, bringing about a significant expansion to the intrinsic capabilities of semiconductors. This combination unites the widely acclaimed Renesas MCU and SoC technologies with Intersil’s market-leading expertise in high performance power management and precision analog devices. In turn, this brings organic growth in the automotive, industrial and broad-based sectors, allowing the new enterprise to respond with greater speed to customers’ systems needs.

The union of Renesas with Intersil began with the completion of the acquisition on February 24, 2017, and the unified “One Global Renesas” went into operation across all markets the following July — bringing together the strengths of both organizations in anticipation of customer requirements in a rapidly changing market environment. This truly global organization offers a vast synergistic effect.

Join Renesas as it strengthens its leading position in the global semiconductor market.
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