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2SA812B-T1B-AT
2SA812B-T1B-AT - PNP SILICON EPI
Mfr. Part Number
2SA812B-T1B-AT
Manufacturer
Renesas Electronics Corporation
Datasheet
Datasheet
Description
2SA812B-T1B-AT - PNP SILICON EPI
RoHS Status
Lead Free / RoHS Complaint
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2SA812B-T1B-AT
Renesas Electronics Corporation
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2SA812B-T1B-AT
Renesas Electronics Corporation
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Specifications
Product Description
Purchase & Inquiry
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 1mA, 6V
Power - Max
200 mW
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MINIMOLD
Brand Introduction
Renesas Electronics Corporation delivers trusted embedded design innovation with complete semiconductor solutions that enable billions of connected, intelligent devices to enhance the way people work and live—securely and safely. A global leader in microcontrollers, analog, power, and SoC products and integrated platforms, Renesas provides the expertise, quality, and comprehensive solutions for a broad range of Automotive, Industrial, Home Electronics, Office Automation and Information Communication Technology applications to help shape a limitless future.
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