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GP2D024A065U
DIODE SILICON CARBIDE
Mfr. Part Number
GP2D024A065U
Manufacturer
SemiQ
Datasheet
Description
DIODE SILICON CARBIDE
RoHS Status
Lead Free / RoHS Complaint
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GP2D024A065U
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Specifications
Product Description
Purchase & Inquiry
Diode Configuration
1 Pair Common Cathode
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
36A (DC)
Voltage - Forward (Vf) (Max) @ If
1.65 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
120 µA @ 650 V
Operating Temperature - Junction
-55°C ~ 175°C
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Brand Introduction

SemiQ designs, develops and manufactures Silicon Carbide (SiC) Power Semiconductors as well as 150mm SiC epitaxial wafers. SiC Diodes and MOSFETs are available in both discrete and module form factors as well as bare die and wafer form. SemiQ also offers power conversion application expertise which includes sub system design and semi custom modules.

SemiQ serves the following end markets: Electric Vehicle Chargers and Charging Stations; Power Factor Correction (PFC); Output Rectification; Power Supplies including Server Farms; Solar Panel Inverters, Welding, Medical Equipment; and Motor Drives. SemiQ's manufacturing and engineering facilities are located in Lake Forest, California. The company is uniquely positioned with a fully redundant SiC supply chain.

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