Transistors - JFETs
Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.
Product List
Total Components: 5
ProductPricingDatasheetFET TypeVoltage - Breakdown (V(BR)GSS)Drain to Source Voltage (Vdss)Current - Drain (Idss) @ Vds (Vgs=0)Current Drain (Id) - MaxVoltage - Cutoff (VGS off) @ IdInput Capacitance (Ciss) (Max) @ VdsResistance - RDS(On)Power - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device PackageStock & Quantity
UJ3N120035K3S
UnitedSiC
1
$29.3000
Datasheet
N-Channel1200 V1200 V-63 A-2145pF @ 100V45 mOhms429 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
3,960
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UF3N170400B7S
UnitedSiC
1
$9.4800
Datasheet
N-Channel1.7 V1.7 V2.2 µA @ 1.7 V6.8 A-225pF @ 100V500 mOhms68 W-55°C ~ 175°C (TJ)Surface MountTO-263-8, D²Pak (7 Leads + Tab), TO-263CAD2PAK-7
2,437
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RFQ
UJ3N065080K3S
UnitedSiC
1
$8.7400
Datasheet
N-Channel650 V650 V-32 A-630pF @ 100V95 mOhms190 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
1,845
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UJ3N065025K3S
UnitedSiC
1
$20.4700
Datasheet
N-Channel650 V650 V-85 A-2360pF @ 100V33 mOhms441 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
9,916
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UJ3N120070K3S
UnitedSiC
1
$15.9400
Datasheet
N-Channel1200 V1200 V-33.5 A-985pF @ 100V90 mOhms254 W-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
7,043
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RFQ