UJ3N065080K3S | Yingxinyuan Int'l(Group) Ltd

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UJ3N065080K3S

650V 80 MOHM SIC JFET, G3, N-ON,

Mfr. Part Number

UJ3N065080K3S

Manufacturer

UnitedSiC

Datasheet

Description

650V 80 MOHM SIC JFET, G3, N-ON,

RoHS Status

Lead Free / RoHS Complaint

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UJ3N065080K3S

UnitedSiC

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UJ3N065080K3S

UnitedSiC

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

650 V

Drain to Source Voltage (Vdss)

650 V

Current - Drain (Idss) @ Vds (Vgs=0)

Current Drain (Id) - Max

32 A

Voltage - Cutoff (VGS off) @ Id

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 100V

Resistance - RDS(On)

95 mOhms

Power - Max

190 W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Brand Introduction

UnitedSiC is now Qorvo.

UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC/DC converters and traction drives, as well as telecom/server power supplies variable speed motor drives and solar PV inverters.