Transistors - IGBTs - Single
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Product List
Total Components: 1
| Product | Pricing | Datasheet | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Power - Max | Switching Energy | Input Type | Gate Charge | Td (on/off) @ 25°C | Test Condition | Reverse Recovery Time (trr) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GA35XCP12-247 GeneSiC Semiconductor | Datasheet | PT | 1200 V | - | 35 A | 3V @ 15V, 35A | - | 2.66mJ (on), 4.35mJ (off) | Standard | 50 nC | - | 800V, 35A, 22Ohm, 15V | 36 ns | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AB | 6,897 Cart + RFQ |