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GA35XCP12-247
IGBT 1200V SOT247
Mfr. Part Number
GA35XCP12-247
Manufacturer
GeneSiC Semiconductor
Datasheet
Description
IGBT 1200V SOT247
RoHS Status
Lead Free / RoHS Complaint
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GA35XCP12-247
GeneSiC Semiconductor
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GA35XCP12-247
GeneSiC Semiconductor
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Specifications
Product Description
Purchase & Inquiry
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
-
Current - Collector Pulsed (Icm)
35 A
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 35A
Power - Max
-
Switching Energy
2.66mJ (on), 4.35mJ (off)
Input Type
Standard
Gate Charge
50 nC
Td (on/off) @ 25°C
-
Test Condition
800V, 35A, 22Ohm, 15V
Reverse Recovery Time (trr)
36 ns
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AB
Brand Introduction

GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.

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