Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 4
ProductPricingDatasheetFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / CaseStock & Quantity
HTNFET-T
Honeywell Aerospace
Datasheet
N-ChannelMOSFET (Metal Oxide)55 V-5V400mOhm @ 100mA, 5V2.4V @ 100µA4.3 nC @ 5 V10V290 pF @ 28 V-50W (Tj)-55°C ~ 225°C (TJ)Through Hole4-Power Tab4-SIP
8,074
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HTNFET-D
Honeywell Aerospace
Datasheet
N-ChannelMOSFET (Metal Oxide)55 V-5V400mOhm @ 100mA, 5V2.4V @ 100µA4.3 nC @ 5 V10V290 pF @ 28 V-50W (Tj)-55°C ~ 225°C (TJ)Through Hole8-CDIP-EP8-CDIP Exposed Pad
7,370
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HTNFET-DC
Honeywell Aerospace
Datasheet
N-ChannelMOSFET (Metal Oxide)55 V-5V400mOhm @ 100mA, 5V2.4V @ 100µA4.3 nC @ 5 V10V290 pF @ 28 V-50W (Tj)-Through Hole-8-CDIP Exposed Pad
2,647
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HTNFET-TC
Honeywell Aerospace
Datasheet
N-ChannelMOSFET (Metal Oxide)55 V-5V400mOhm @ 100mA, 5V2.4V @ 100µA4.3 nC @ 5 V10V290 pF @ 28 V-50W (Tj)-Through Hole--
6,492
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RFQ