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HTNFET-T

MOSFET N-CH 55V 4POWER TAB

Mfr. Part Number

HTNFET-T

Manufacturer

Honeywell Aerospace

Datasheet

Description

MOSFET N-CH 55V 4POWER TAB

RoHS Status

Lead Free / RoHS Complaint

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HTNFET-T

Honeywell Aerospace

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HTNFET-T

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Specifications

Product Description

Purchase & Inquiry

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55 V

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

400mOhm @ 100mA, 5V

Vgs(th) (Max) @ Id

2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

4.3 nC @ 5 V

Vgs (Max)

10V

Input Capacitance (Ciss) (Max) @ Vds

290 pF @ 28 V

FET Feature

Power Dissipation (Max)

50W (Tj)

Operating Temperature

-55°C ~ 225°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-Power Tab

Package / Case

4-SIP

Brand Introduction

Honeywell has been producing high-performance inertial sensors for decades and has delivered more than 500,000 units to serve as navigation aids on just about every airplane and spacecraft flying today. Their diverse suite of non-itar, commercial HGuide IMUs and navigators provide the same technology and are available today for several industrial applications including but not limited to agriculture, AUVs, communications, industrial equipment, marine, oil and gas, robotics, survey and mapping, stabilized platforms, transportation, UAVs and UGVs.