Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 81
| Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
C3M0065090J-TR Wolfspeed | 1 $16.2800 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 900 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30 nC @ 15 V | +19V, -8V | 660 pF @ 600 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 8,106 Cart + RFQ |
C3M0075120K Wolfspeed | 1 $17.7200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +19V, -8V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | 5,172 Cart + RFQ |
C2M0080120D Wolfspeed | 1 $24.1200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 62 nC @ 5 V | +25V, -10V | 950 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 9,244 Cart + RFQ |
C3M0040120K Wolfspeed | 1 $75.0000 100 $60.0000 500 $50.0000 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 99 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 326W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | 10,000 Cart + RFQ |
C3M0032120K Wolfspeed | 1 $32.5800 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 15V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 118 nC @ 15 V | +15V, -4V | 3357 pF @ 1000 V | - | 283W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | 6,731 Cart + RFQ |
C2M0040120D Wolfspeed | 1 $45.8100 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115 nC @ 20 V | +25V, -10V | 1893 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 4,967 Cart + RFQ |
C2M0045170P Wolfspeed | 1 $93.0000 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 59mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 | 9,408 Cart + RFQ |
C2M0045170D Wolfspeed | 1 $101.3700 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 70mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1,120 Cart + RFQ |
C3M0120100J Wolfspeed | 1 $13.7800 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5 nC @ 15 V | +15V, -4V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 5,793 Cart + RFQ |
C3M0280090J-TR Wolfspeed | 1 $6.5200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 8,096 Cart + RFQ |
C2M0160120D Wolfspeed | 1 $13.1200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 19A (Tc) | 20V | 196mOhm @ 10A, 20V | 2.5V @ 500µA | 32.6 nC @ 20 V | +25V, -10V | 527 pF @ 800 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 5,614 Cart + RFQ |
C3M0065090D Wolfspeed | 1 $38.7693 100 $31.0154 500 $25.8462 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 900 V | 36A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4 nC @ 15 V | +18V, -8V | 660 pF @ 600 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 610 Cart + RFQ |
C3M0280090D Wolfspeed | 1 $6.1900 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11.5A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 9,113 Cart + RFQ |
C3M0280090J Wolfspeed | 1 $6.5200 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 900 V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5 nC @ 15 V | +18V, -8V | 150 pF @ 600 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 8,783 Cart + RFQ |
C3M0350120D Wolfspeed | 1 $6.6600 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 7.6A (Tc) | 15V | 455mOhm @ 3.6A, 15V | 3.6V @ 1mA | 19 nC @ 15 V | +15V, -4V | 345 pF @ 1000 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 5,438 Cart + RFQ |
C3M0120090J-TR Wolfspeed | 1 $11.8000 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 900 V | 22A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3 nC @ 15 V | +18V, -8V | 350 pF @ 600 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | 2,901 Cart + RFQ |
C2M0280120D Wolfspeed | 1 $9.0400 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 20V | 370mOhm @ 6A, 20V | 2.8V @ 1.25mA (Typ) | 20.4 nC @ 20 V | +25V, -10V | 259 pF @ 1000 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 3,561 Cart + RFQ |
C2M1000170D Wolfspeed | 1 $5.5710 100 $4.4568 500 $3.7140 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4.9A (Tc) | 20V | 1.1Ohm @ 2A, 20V | 2.4V @ 100µA | 13 nC @ 20 V | +25V, -10V | 191 pF @ 1000 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 2,500 Cart + RFQ |
C2M1000170J Wolfspeed | 1 $9.9700 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.3A (Tc) | 20V | 1.4Ohm @ 2A, 20V | 3.1V @ 500µA (Typ) | 13 nC @ 20 V | +25V, -10V | 200 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7 (Straight Leads) | 2,638 Cart + RFQ |
C3M0160120D Wolfspeed | 1 $10.0000 | Datasheet | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 15V | 208mOhm @ 8.5A, 15V | 3.6V @ 2.33mA | 38 nC @ 15 V | +15V, -4V | 632 pF @ 1000 V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 6,058 Cart + RFQ |