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C2M0280120D
SICFET N-CH 1200V 10A TO247-3
Mfr. Part Number
C2M0280120D
Manufacturer
Wolfspeed
Datasheet
Description
SICFET N-CH 1200V 10A TO247-3
RoHS Status
Lead Free / RoHS Complaint
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C2M0280120D
Wolfspeed
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C2M0280120D
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Specifications
Product Description
Purchase & Inquiry
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
20.4 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
259 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Brand Introduction

Wolfspeed (NYSE: WOLF) leads the market in the worldwide adoption of Silicon Carbide and GaN technologies. We provide industry-leading solutions for efficient energy consumption and a sustainable future. Wolfspeed’s product families include Silicon Carbide materials, power-switching devices and RF devices targeted for various applications such as electric vehicles, fast charging, 5G, renewable energy and storage, and aerospace and defense. We unleash the power of possibilities through hard work, collaboration and a passion for innovation.

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