Transistors - FETs, MOSFETs - Single
Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
Product List
Total Components: 45
| Product | Pricing | Datasheet | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | Stock & Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TP65H050G4BS Transphorm | 1 $13.6500 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 650 V | 34A (Tc) | 10V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 2,392 Cart + RFQ |
TP65H070LSG-TR Transphorm | 1 $13.7400 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN | 4,195 Cart + RFQ |
TPH3206PS Transphorm | 1 $10.3700 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 6,701 Cart + RFQ |
TP65H070LDG Transphorm | 1 $13.7400 | Datasheet | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 25A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.8V @ 700µA | 9.3 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN | 2,807 Cart + RFQ |
TP65H050WS Transphorm | 1 $19.2400 | Datasheet | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 34A (Tc) | 12V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 8,857 Cart + RFQ |
TP65H035G4WS Transphorm | 1 $19.5400 | Datasheet | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 46.5A (Tc) | 10V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 22 nC @ 0 V | ±20V | 1500 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 | 7,056 Cart + RFQ |
TP90H050WS Transphorm | 1 $20.0300 | Datasheet | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 900 V | 34A (Tc) | 10V | 63mOhm @ 22A, 10V | 4.4V @ 700µA | 17.5 nC @ 10 V | ±20V | 980 pF @ 600 V | - | 119W (Tc) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 | 7,394 Cart + RFQ |
TP65H035WS Transphorm | 1 $21.7600 | Datasheet | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 46.5A (Tc) | 12V | 41mOhm @ 30A, 10V | 4.8V @ 1mA | 36 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 3,377 Cart + RFQ |
TP65H035WSQA Transphorm | 1 $23.2000 | Datasheet | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 47.2A (Tc) | 10V | 41mOhm @ 32A, 10V | 4.5V @ 1mA | 24 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 7,926 Cart + RFQ |
TP65H015G5WS Transphorm | 1 $35.1400 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 650 V | 93A (Tc) | 10V | 18mOhm @ 60A, 10V | 4.8V @ 2mA | 100 nC @ 10 V | ±20V | 5218 pF @ 400 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 4,059 Cart + RFQ |
TP65H150G4PS Transphorm | 1 $6.2403 | Datasheet | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 3,495 Cart + RFQ |
TPH3206PD Transphorm | 1 $11.2600 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 9,567 Cart + RFQ |
TP65H050WSQA Transphorm | 1 $20.6700 | Datasheet | N-Channel | GaNFET (Cascode Gallium Nitride FET) | 650 V | 36A (Tc) | 10V | 60mOhm @ 25A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 8,646 Cart + RFQ |
TPH3205WSBQA Transphorm | 1 $22.9700 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 650 V | 35A (Tc) | 10V | 62mOhm @ 22A, 8V | 2.6V @ 700µA | 42 nC @ 8 V | ±18V | 2200 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 3,061 Cart + RFQ |
TPH3202PS Transphorm | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 2,603 Cart + RFQ | |
TPH3202LD Transphorm | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN | 6,384 Cart + RFQ | |
TPH3206LD Transphorm | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PQFN (8x8) | 4-PowerDFN | 5,115 Cart + RFQ | |
TPH3208LD Transphorm | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PQFN (8x8) | 4-PowerDFN | 5,421 Cart + RFQ | |
TPH3207WS Transphorm | 1 $33.2000 | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 650 V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42 nC @ 8 V | ±18V | 2197 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 1,762 Cart + RFQ |
TPH3202PD Transphorm | Datasheet | N-Channel | GaNFET (Gallium Nitride) | 600 V | 9A (Tc) | 10V | 350mOhm @ 5.5A, 8V | 2.5V @ 250µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 | 9,545 Cart + RFQ |